生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.59 |
Is Samacsys: | N | 最大集电极电流 (IC): | 30 A |
配置: | Single | 最小直流电流增益 (hFE): | 30 |
最高工作温度: | 175 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 150 W | 子类别: | Other Transistors |
表面贴装: | NO | 标称过渡频率 (fT): | 40 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N5560E3 | MICROSEMI | Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, |
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2N5561 | ETC | TRANSISTOR | JFET | N-CHANNEL | DUAL | 50V V(BR)DSS | 10MA I(DSS) | TO-71 |
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|
2N5562 | VISHAY | Small Signal Field-Effect Transistor, N-Channel, Junction FET, |
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|
2N5563 | VISHAY | Small Signal Field-Effect Transistor, N-Channel, Junction FET, |
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2N5564 | VISHAY | Matched N-Channel JFET Pairs |
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2N5564 | NJSEMI | MATCHED N-CHANNEL JFET PAIRS |
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