是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-66 |
包装说明: | TO-66, 2 PIN | 针数: | 2 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.15 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 7 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 60 |
JEDEC-95代码: | TO-66 | JESD-30 代码: | O-MBFM-P2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 40 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 30 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5428A | SEME-LAB |
获取价格 |
MEDIUM POWER NPN SILICON | |
2N5428LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 | |
2N5429 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
2N5429 | MOSPEC |
获取价格 |
POWER TRANSISTORS(7A,40W) | |
2N5429 | CENTRAL |
获取价格 |
Power Transistors | |
2N5429 | NJSEMI |
获取价格 |
COLLECTOR EMITTER VOLTAGE | |
2N5429 | ISC |
获取价格 |
isc Silicon NPN Power Transistor | |
2N5429 | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO66 | |
2N5429LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 | |
2N542A | NJSEMI |
获取价格 |
SI NPN LO-PWR BJT |