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2N5401J05Z PDF预览

2N5401J05Z

更新时间: 2024-01-17 01:04:17
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
14页 512K
描述
600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92, 3 PIN

2N5401J05Z 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92包装说明:TO-92, 3 PIN
针数:3Reach Compliance Code:compliant
风险等级:5最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:150 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
湿度敏感等级:NOT APPLICABLE元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:PNP最大功率耗散 (Abs):0.63 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

2N5401J05Z 数据手册

 浏览型号2N5401J05Z的Datasheet PDF文件第2页浏览型号2N5401J05Z的Datasheet PDF文件第3页浏览型号2N5401J05Z的Datasheet PDF文件第4页浏览型号2N5401J05Z的Datasheet PDF文件第5页浏览型号2N5401J05Z的Datasheet PDF文件第6页浏览型号2N5401J05Z的Datasheet PDF文件第7页 
2N5401  
MMBT5401  
C
E
TO-92  
C
B
B
SOT-23  
Mark: 2L  
E
PNP General Purpose Amplifier  
This device is designed as a general purpose amplifier and switch  
for applications requiring high voltages.  
Absolute Maximum Ratings*  
TA= 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
150  
160  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
600  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.  
Thermal Characteristics  
TA= 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5401  
*MMBT5401  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
350  
2.8  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
83.3  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
200  
357  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
2001 Fairchild Semiconductor Corporation  
2N5401/MMBT5401, Rev A  

2N5401J05Z 替代型号

型号 品牌 替代类型 描述 数据表
2N5400 ONSEMI

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Amplifier Transistors PNP Silicon
2N5400 MICRO-ELECTRONICS

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COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS
2N5400 MOTOROLA

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Amplifier Transistor(PNP Silicon)

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