2N5397

更新时间： 2024-09-22 22:49:23

品牌	Logo	应用领域
INTERFET		晶体晶体管场效应晶体管
页数	文件大小	规格书
1页	94K
描述
N-Channel Silicon Junction Field-Effect Transistor

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中文翻译

获取价格

数据手册

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2N5397 数据手册

B-20

01/99

2N5397, 2N5398

N-Channel Silicon Junction Field-Effect Transistor

Absolute maximum ratings at T = 25¡C

¥ Low-Noise

Reverse Gate Source & Reverse Gate Drain Voltage

– 25 V

25 V

10 mA

¥ High Power Gain

¥ High Transconductance

¥ Mixers

Drain Source Voltage

Continuous Forward Gate Current

Continuous Device Power Dissipation

Power Derating

300 mW

1.7 mW/°C

¥ Oscillators

¥ VHF Amplifiers

At 25°C free air temperature:

Static Electrical Characteristics

2N5397

2N5398

Process NJ26L

Test Conditions

I = – 1 µA, V = ØV

Min Max Min Max Unit

Gate Source Breakdown Voltage

Gate Source Forward Voltage

– 25

(BR)GSS

I = 1 mA, V = ØV

G DS

GS(F)

– 0.1

– 0.1 nA

– 0.1 µA

= – 15V, V = ØV

Gate Reverse Current

GSS

= – 15V, V = ØV

T = 150°C

Gate Source Cutoff Voltage

– 1 – 6 – 1 – 6

= 10V, I = 1 nA

GS(OFF)

Drain Saturation Current (Pulsed)

= 10V, V = ØV

DSS

Dynamic Electrical Characteristics

Common Source

Forward Transconductance

5.5

= 10V, I = 10 mA

f = 450 MHz

f = 1 kHz

Common Source

Forward Transfer Admittance

| Y |

5.5

= 10V, I = 10 mA

Common Source Output Conductance

Common Source Input Admittance

Common Source Input Conductance

Common Source Input Capacitance

| g

0.4

0.2

0.5 mS

0.4 mS

= 10V, I = 10 mA

f = 450 MHz

f = 1 kHz

| Y |

= 10V, I = 10 mA

f = 450 MHz

f = 1 kHz

5.5

= 15V, V = ØV

iss

Common Source

Reverse Transfer Capacitance

1.2

1.3

= 15V, V = ØV

f = 1 kHz

rss

TOÐ72 Package

Dimensions in Inches (mm)

Surface Mount

SMP5397, SMP5398

Pin Configuration

1 Source, 2 Drain, 3 Gate, 4 Case

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

中文翻译

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