5秒后页面跳转
捷配首页

Datasheet > 2N5308_02
2N5308_02 PDF预览

2N5308_02

更新时间： 2024-09-24 03:56:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管达林顿晶体管
页数 文件大小 规格书
4页 58K
描述
NPN Darlington Transistor

阅读下载

中文翻译

获取价格

2N5308_02 数据手册

 浏览型号2N5308_02的Datasheet PDF文件第2页浏览型号2N5308_02的Datasheet PDF文件第3页浏览型号2N5308_02的Datasheet PDF文件第4页 
2N5306  
NPN Darlington Transistor  
•
This device is designed for applications requiring extremely high  
current gain at currents to 1.0A.  
•
•
Sourced from process 05.  
See MPSA14 for characteristics.  
TO-92  
1. Emitter 2. Collector 3. Base  
1
Absolute Maximum Ratings * T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Emitter Voltage  
25  
25  
CEO  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
V
CBO  
EBO  
12  
V
I
- Continuous  
1.2  
A
C
T , T  
Operating and Storage Junction Temperature Range  
-55 ~ +150  
°C  
J
STG  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1. These ratings are based on a maximum junction temperature of 150 degrees C.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
Off Characteristics  
V
V
V
Collector-Emitter Breakdown Voltage *  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
I
I
I
= 10mA, I = 0  
25  
25  
12  
V
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
CBO  
C
C
E
B
= 0.1µA, I = 0  
E
= 0.1µA, I = 0  
C
I
V
V
= 25V, I = 0  
0.1  
20  
µA  
µA  
CB  
CB  
E
= 25V, I = 0, T = 100°C  
E
a
I
Emitter Cutoff Current  
V
= 12V, I = 0  
0.1  
µA  
EBO  
EB  
C
On Characteristics *  
h
DC Current Gain  
V
V
= 5.0V, I = 2.0mA  
7,000  
20,000  
70,000  
FE  
CE  
CE  
C
= 5.0V, I = 100mA  
C
V
V
V
(sat)  
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturatin Voltage  
Base-Emitter On Voltage  
I
I
I
= 200mA, I = 0.2mA  
1.4  
1.6  
1.5  
V
V
V
CE  
BE  
BE  
C
C
C
B
= 200mA, I = 0.2mA  
B
= 200mA, V = 5.0V  
CE  
Small Signal Characteristics  
C
Collector-Base Capacitance  
Small-Signal Current Gain  
V
= 10V, f = 1.0MHz  
CB  
10  
pF  
cb  
fe  
h
I = 2.0mA, V = 5.0V,  
C CE  
f = 1.0KHz  
= 2.0mA, V = 5.0V,  
f = 10MHz  
7000  
6.0  
I
C
CE  
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%  
©2002 Fairchild Semiconductor Corporation  
Rev. B1, July 2002  
1234

中文翻译

下载PDF

与2N5308_02相关器件

型号 品牌 获取价格 描述 数据表
2N5308-18F CENTRAL

获取价格

 		Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F,
2N5308-18R CENTRAL

获取价格

 		Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R,
2N5308-18RLEADFREE CENTRAL

获取价格

 		Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R,
2N5308-5F CENTRAL

获取价格

 		Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-5F, 3
2N5308-5T CENTRAL

获取价格

 		Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-5T, 3
2N5308-5T1 CENTRAL

获取价格

 		Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-5T1,
2N5308A NJSEMI

获取价格

 		SILICON TRANSISTORS
2N5308A ALLEGRO

获取价格

 		Transistor
2N5308APM CENTRAL

获取价格

 		Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2N5308APMLEADFREE CENTRAL

获取价格

 		暂无描述

与2N5308_02相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证