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2N5151_02

更新时间: 2024-11-27 03:56:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
2页 200K
描述
Silicon PNP Transistor

2N5151_02 数据手册

 浏览型号2N5151_02的Datasheet PDF文件第2页 
2N5151  
Silicon PNP Transistor  
Data Sheet  
Description  
Applications  
High-speed power switching  
Low power  
Semicoa Semiconductors offers:  
PNP silicon transistor  
Screening and processing per MIL-PRF-19500 Appendix E  
JAN level (2N5151J)  
JANTX level (2N5151JX)  
JANTXV level (2N5151JV)  
JANS level (2N5151JS)  
QCI to the applicable level  
100% die visual inspection per MIL-STD-750 method  
2072 for JANTXV and JANS  
Features  
Radiation testing (total dose) upon request  
Hermetically sealed TO-39 metal can  
Also available in chip configuration  
Chip geometry 9702  
Reference document:  
MIL-PRF-19500/545  
Benefits  
Qualification Levels: JAN, JANTX,  
JANTXV and JANS  
Radiation testing available  
Please contact Semicoa for special configurations  
www.SEMICOA.com or (714) 979-1900  
Absolute Maximum Ratings  
TC = 25°C unless otherwise specified  
Parameter  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Symbol  
VCEO  
VCBO  
Rating  
80  
100  
Unit  
Volts  
Volts  
Volts  
A
VEBO  
IC  
5.5  
Collector Current, Continuous  
2
Power Dissipation, TA = 25OC  
Derate linearly above 25OC  
Power Dissipation, TC = 25OC  
Derate linearly above 25OC  
1
W
PT  
5.7  
mW/°C  
W
11.8  
PT  
66.7  
mW/°C  
RθJA  
175  
15  
Thermal Resistance  
°C/W  
°C  
RθJC  
TJ  
Operating Junction Temperature  
Storage Temperature  
-65 to +200  
TSTG  
Semicoa Semiconductors, Inc.  
Copyright2002  
Rev. D  
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541  
Page 1 of 2  
www.SEMICOA.com  

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