Datasheet > 2N5116HR-PBF

2N5116HR-PBF

更新时间： 2024-11-26 20:41:55

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
7页	1194K
描述
Small Signal Field-Effect Transistor

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技术参数
数据手册

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2N5116HR-PBF 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.61	Base Number Matches：	1

2N5116HR-PBF 数据手册

2N5114-2N5116

P-CHANNEL JFETS

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Symbol

Value

Units

Gate drain voltage

Gate source voltage

Gate current

V_GD

V_GS

I_GS

-50

°C

Storage temperature range

T_stg

T_J

-65 to +200

-55 to +200

300

Operating junction temperature range

Lead temperature (1/16” from case for 10s)

T_L

Power dissipation

Derate above 25°C

500

P_D

mW/°C

ELECTRICAL CHARACTERISTICS (T_C= 25°C unless otherwise specified)

2N5114

2N5115

2N5116

Characteristic

Symbol

Unit

Min

Max

Min

Max

Min

Max

Gate source breakdown voltage

V_(BR)GSS

I_G= 1.0µA, V_DS= 0

Gate source cutoff voltage

V_GS(off)

V_DS= -15V, I_D= -1nA

Saturation drain current ⁽¹⁾

V_GS= 0, V_DS= -18V

I_DSS

-30

-90

V_GS= 0, V_DS= -15V

-15

-60

-5

-25

Gate reverse current

V_GS= 20V, V_DS= 0

I_GSS

500

µA

V_GS= 20V, V_DS= 0, T_A= 150°C

Drain cutoff current

V_DS= -15V, V_GS= 12V

-500

µA

V_DS= -15V, V_GS= 7V

-500

V_DS= -15V, V_GS= 5V

I_D(off)

-500

V_DS= -15V, V_GS= 12V, T_A= 150°C

V_DS= -15V, V_GS= 7V, T_A= 150°C

V_DS= -15V, V_GS= 5V, T_A= 150°C

-1

Drain source on-voltage

V_GS= 0, I_D= -15mA

V_GS= 0, I_D= -7mA

-1.3

-0.8

V_DS(on)

V_GS= 0, I_D= -3mA

-0.6

Rev. 20150609

12 3 4 5 6 7

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