2N5114-2N5116
P-CHANNEL JFETS
High-reliability discrete products
and engineering services since 1977
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Units
Gate drain voltage
Gate source voltage
Gate current
VGD
VGS
IGS
30
30
V
V
-50
mA
°C
°C
°C
Storage temperature range
Tstg
TJ
-65 to +200
-55 to +200
300
Operating junction temperature range
Lead temperature (1/16” from case for 10s)
TL
Power dissipation
Derate above 25°C
500
3
mW
PD
mW/°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
2N5114
2N5115
2N5116
Characteristic
Symbol
Unit
Min
Max
Min
Max
Min
Max
Gate source breakdown voltage
V(BR)GSS
30
5
-
30
-
30
-
V
V
IG = 1.0µA, VDS = 0
Gate source cutoff voltage
VGS(off)
10
3
6
1
4
VDS = -15V, ID = -1nA
Saturation drain current (1)
VGS = 0, VDS = -18V
IDSS
-30
-
-90
-
-
-
-
-
mA
VGS = 0, VDS = -15V
-15
-60
-5
-25
Gate reverse current
VGS = 20V, VDS = 0
IGSS
-
-
500
1
-
-
500
1
-
-
500
1
pA
µA
VGS = 20V, VDS = 0, TA = 150°C
Drain cutoff current
VDS = -15V, VGS = 12V
-
-
-
-
-
-
-500
-
-
-
-
-
-
-
-
-
-
-
-
-
-
pA
pA
pA
µA
µA
µA
VDS = -15V, VGS = 7V
-
-
-500
-
VDS = -15V, VGS = 5V
ID(off)
-
-
-500
VDS = -15V, VGS = 12V, TA = 150°C
VDS = -15V, VGS = 7V, TA = 150°C
VDS = -15V, VGS = 5V, TA = 150°C
-1
-
-
-
-1
-
-
-1
Drain source on-voltage
VGS = 0, ID = -15mA
VGS = 0, ID = -7mA
-
-
-
-1.3
-
-
-
-
-0.8
-
-
-
-
-
-
VDS(on)
V
-
-
VGS = 0, ID = -3mA
-0.6
Rev. 20150609