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2N5116 PDF预览

2N5116

更新时间: 2024-02-27 11:42:18
品牌 Logo 应用领域
Linear Systems /
页数 文件大小 规格书
2页 304K
描述
SINGLE P-CHANNEL JFET

2N5116 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:compliantHTS代码:8541.21.00.95
风险等级:5.07配置:SINGLE
最大漏源导通电阻:150 ΩFET 技术:JUNCTION
最大反馈电容 (Crss):7 pFJEDEC-95代码:TO-18
JESD-30 代码:O-MBCY-W3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN (315)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2N5116 数据手册

 浏览型号2N5116的Datasheet PDF文件第2页 
2N5114 SERIES  
SINGLE P-CHANNEL JFET  
Linear Integrated Systems  
FEATURES  
DIRECT REPLACEMENT FOR SILICONIX 2N5114  
LOW ON RESISTANCE  
75  
LOW CAPACITANCE  
6pF  
TO-18  
ABSOLUTE MAXIMUM RATINGS1  
@ 25 °C (unless otherwise stated)  
Maximum Temperatures  
BOTTOM VIEW  
G
S
2
1
3
D
Storage Temperature  
Junction Operating Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
Maximum Currents  
Gate Current  
-55 to 200°C  
-55 to 200°C  
500mW  
-50mA  
Maximum Voltages  
Gate to Drain  
Gate to Source  
30V  
30V  
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)  
2N5114  
2N5115  
2N5116  
SYM.  
CHARACTERISTIC  
TYP  
UNIT CONDITIONS  
MIN MAX MIN MAX MIN MAX  
BVGSS Gate to Source Breakdown Voltage  
VGS(off) Gate to Source Cutoff Voltage  
30  
5
30  
3
30  
1
IG = 1µA, VDS = 0V  
VDS = -15V, ID = -1nA  
IG = -1mA, VDS = 0V  
VGS = 0V, ID = -15mA  
VGS = 0V, ID = -7mA  
VGS = 0V, ID = -3mA  
10  
-1  
-1.3  
6
-1  
4
-1  
VGS(F)  
Gate to Source Forward Voltage  
-0.7  
-1.0  
-0.7  
-0.5  
V
VDS(on) Drain to Source On Voltage  
-0.8  
-0.6  
-30  
-90  
500  
-500  
VDS = -18V, VGS = 0V  
VDS = -15V, VGS = 0V  
IDSS  
Drain to Source Saturation Current2  
mA  
-15  
-60  
500  
-5  
-25  
500  
IGSS  
IG  
Gate Leakage Current  
Gate Operating Current  
5
-5  
-10  
-10  
-10  
VGS = 20V, VDS = 0V  
VDG = -15V, ID = -1mA  
VDS = -15V, VGS = 12V  
VDS = -15V, VGS = 7V  
VDS = -15V, VGS = 5V  
VGS = 0V, ID = -1mA  
pA  
ID(off)  
Drain Cutoff Current  
-500  
100  
-500  
150  
rDS(on)  
Drain to Source On Resistance  
75  
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  

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