Datasheet > 2N5116

2N5116

更新时间： 2023-12-06 20:00:39

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
15页	771K
描述
1V,4V,50mA,500mW Through-Hole JFET P Channel

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2N5116 数据手册

2N5114

2N5115

2N5116

www.centralsemi.com

DESCRIPTION:

SILICON

The CENTRAL SEMICONDUCTOR 2N5114, 2N5115,

and 2N5116 are silicon P-Channel JFETs designed for

switching applications.

P-CHANNEL JFETS

MARKING: FULL PART NUMBER

TO-18 CASE

MAXIMUM RATINGS: (T =25°C)

Gate-Drain Voltage

SYMBOL

UNITS

Gate-Source Voltage

Gate Current

°C

Power Dissipation

500

Operating and Storage Junction Temperature

T , T

-65 to +200

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

2N5114

2N5115

MIN MAX

2N5116

MIN MAX

SYMBOL

TEST CONDITIONS

MIN MAX

UNITS

=20V

500

1.0

500

1.0

500

1.0

GSS

=20V, T =150°C

μA

GSS

=18V

=15V

DSS

5.0

DSS

=15V, V =12V

500

D(OFF)

=15V, V =7.0V

=15V, V =5.0V

500

=15V, V =12V, T =150°C

=15V, V =7.0V, T =150°C

1.0

=15V, V =5.0V, T =150°C

1.0

I =1.0ꢀA

GSS

GS(OFF)

GS(f)

=15V, I =1.0nA

5.0

1.0

1.3

3.0

6.0

1.0

4.0

1.0

I =1.0mA

I =15mA

DS(ON)

ds(ON)

I =7.0mA

0.8

I =3.0mA

0.6

150

I =1.0mA, V =0

7.0

100

=0, I =0, f=1.0kHz

=15V, V =0, f=1.0MHz

iss

rss

=12V, V =0, f=1.0MHz

=7.0V, V =0, f=1.0MHz

7.0

=5.0V, V =0, f=1.0MHz

7.0

R1 (4-March 2014)

12 3 4 5 6 7...15

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