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2N5115JANTX PDF预览

2N5115JANTX

更新时间: 2024-11-22 22:18:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
3页 29K
描述
P-Channel JFETs

2N5115JANTX 数据手册

 浏览型号2N5115JANTX的Datasheet PDF文件第2页浏览型号2N5115JANTX的Datasheet PDF文件第3页 
2N5114JAN/JANTX/JANTXV Series  
Vishay Siliconix  
P-Channel JFETs  
2N5114JAN/JANTX/JANTXV  
2N5115JAN/JANTX/JANTXV  
2N5116JAN/JANTX/JANTXV  
PRODUCT SUMMARY  
Part Number  
VGS(off) (V)  
rDS(on) Max (W) ID(off) Typ (pA) tON Max (ns)  
2N5114  
2N5115  
2N5116  
5 to 10  
3 to 6  
1 to 4  
75  
–10  
–10  
–10  
16  
30  
42  
100  
150  
FEATURES  
BENEFITS  
APPLICATIONS  
D Low On-Resistance: 2N5114 <75 W  
D Fast Switching—tON: 16 ns  
D High Off-Isolation—ID(off): –10 pA  
D Low Capacitance: 6 pF  
D Low Error Voltage  
D Analog Switches  
D High-Speed Analog Circuit Performance  
D Negligible “Off-Error,” Excellent Accuracy  
D Good Frequency Response  
D Choppers  
D Sample-and-Hold  
D Normally “On” Switches  
D Current Limiters  
D Low Insertion Loss  
D Eliminates Additional Buffering  
DESCRIPTION  
The 2N5114JAN/JANTX/JANTXV series consists of  
p-channel JFET analog switches designed to provide low  
on-resistance, good off-isolation, and fast switching. These  
JFETs are optimized for use in complementary switching  
applications with the Vishay Siliconix 2N4856A series.  
TO-206AA  
(TO-18)  
S
1
2
3
G
D
Case  
Top View  
ABSOLUTE MAXIMUM RATINGS  
1
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V  
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V  
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 200_C  
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C  
16  
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW  
Notes  
a. Derate 3 mW/_C above 25_C  
Document Number: 70261  
S-04030—Rev. E, 04-Jun-01  
www.vishay.com  
9-1  

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