2N5115
P-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N5115
FEATURES
This analog switch is designed for inverting switching
DIRECT REPLACEMENT FOR SILICONIX 2N5115
LOW ON RESISTANCE
into inverting input of an Operational Amplifier.
rDS(on) ≤ 100Ω
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
6pF
The hermetically sealed TO-18 package is well suited
for hi-reliability and harsh environment applications.
Maximum Temperatures
(See Packaging Information).
Storage Temperature
‐55°C to +200°C
‐55°C to +200°C
2N5115 Benefits:
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Low On Resistance
D(off) ≤ 500 pA
Switches directly from TTL logic
I
500mW
2N5115 Applications:
Gate Current (Note 1)
IG = ‐50mA
Analog Switches
Commutators
Choppers
MAXIMUM VOLTAGES
Gate to Drain Voltage
Gate to Source Voltage
VGDS = 30V
VGSS = 30V
2N5115 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVGSS
VGS(off)
VGS(F)
CHARACTERISTIC
MIN
30
3
‐‐
‐‐
‐‐
‐‐
‐15
‐‐
‐‐
TYP.
‐‐
‐‐
‐0.7
‐1.0
‐0.7
‐0.5
‐‐
5
‐5
‐10
‐10
‐10
‐‐
MAX
‐‐
6
‐1
‐‐
‐0.8
‐‐
‐60
500
‐‐
‐‐
‐500
‐‐
UNITS
V
CONDITIONS
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Forward Voltage
IG = 1µA, VDS = 0V
VDS = ‐15V, ID = ‐1nA
IG = ‐1mA, VDS = 0V
VGS = 0V, ID = ‐15mA
VDS(on)
Drain to Source On Voltage
VGS = 0V, ID = ‐7mA
VGS = 0V, ID = ‐3mA
VDS = ‐15V, VGS = 0V
VGS = 20V, VDS = 0V
VDS = ‐15V, ID = ‐1mA
VDS = ‐15V, VGS = 12V
VDS = ‐15V, VGS = 7V
VDS = ‐15V, VGS = 5V
ID = ‐1mA, VGS = 0V
IDSS
IGSS
IG
Drain to Source Saturation Current (Note 2)
Gate Reverse Current
mA
pA
Gate Operating Current
‐‐
‐‐
‐‐
‐‐
ID(off)
Drain Cutoff Current
rDS(on)
Drain to Source On Resistance
100
Ω
Click To Buy
2N5115 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
gfs
gos
rDS(on)
Ciss
CHARACTERISTIC
Forward Transconductance
Output Conductance
Drain to Source On Resistance
Input Capacitance
MIN
‐‐
‐‐
‐‐
‐‐
TYP.
4.5
20
‐‐
20
5
MAX
‐‐
‐‐
100
25
‐‐
UNITS
mS
µS
CONDITIONS
VDS = ‐15V, ID = 1mA , f = 1kHz
Ω
ID = 0A, VGS = 0V, f = 1kHz
VDS = ‐15V, VGS = 0V, f = 1MHz
VDS = 0V, VGS = 12V, f = 1MHz
VDS = 0V, VGS = 7V, f = 1MHz
VDS = 0V, VGS = 5V, f = 1MHz
VDG = 10V, ID = 10mA , f = 1kHz
pF
‐‐
Crss
Reverse Transfer Capacitance
‐‐
6
7
‐‐
‐‐
6
en
Equivalent Noise Voltage
‐‐
20
‐‐
nV/√Hz
2N5115 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
td(on)
tr
CHARACTERISTIC
UNITS
CONDITIONS
Turn On Time
10
20
8
VGS(L) = ‐7V
VGS(H) = 0V
Turn On Rise Time
Turn Off Time
ns
td(off)
tf
See Switching Circuit
Turn Off Fall Time
30
Note 1 ‐ Absolute maximum ratings are limiting values above which 2N5115 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
2N5115 SWITCHING CIRCUIT PARAMETERS
SWITCHING TEST CIRCUIT
VDD
VGG
RL
‐6V
Available Packages:
TO-18 (Bottom View)
12V
2N5115 in TO-18
2N5115 in bare die.
910Ω
220Ω
‐7mA
RG
ID(on)
Please contact Micross for full
package and die dimensions
Micross Components Europe
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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