Datasheet > 2N5114JAN

2N5114JAN

更新时间： 2024-02-12 19:02:20

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	29K
描述
P-Channel JFETs

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技术参数
数据手册

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2N5114JAN 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.6
Base Number Matches：	1

2N5114JAN 数据手册

2N5114JAN/JANTX/JANTXV Series

Vishay Siliconix

P-Channel JFETs

2N5114JAN/JANTX/JANTXV

2N5115JAN/JANTX/JANTXV

2N5116JAN/JANTX/JANTXV

PRODUCT SUMMARY

Part Number

V_GS(off)(V)

r_DS(on)Max (W) I_D(off)Typ (pA) t_ONMax (ns)

2N5114

2N5115

2N5116

5 to 10

3 to 6

1 to 4

–10

100

150

FEATURES

BENEFITS

APPLICATIONS

D Low On-Resistance: 2N5114 <75 W

D Fast Switching—t_ON: 16 ns

D High Off-Isolation—I_D(off): –10 pA

D Low Capacitance: 6 pF

D Low Error Voltage

D Analog Switches

D High-Speed Analog Circuit Performance

D Negligible “Off-Error,” Excellent Accuracy

D Good Frequency Response

D Choppers

D Sample-and-Hold

D Normally “On” Switches

D Current Limiters

D Low Insertion Loss

D Eliminates Additional Buffering

DESCRIPTION

The 2N5114JAN/JANTX/JANTXV series consists of

p-channel JFET analog switches designed to provide low

on-resistance, good off-isolation, and fast switching. These

JFETs are optimized for use in complementary switching

applications with the Vishay Siliconix 2N4856A series.

TO-206AA

(TO-18)

Case

Top View

ABSOLUTE MAXIMUM RATINGS

Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 200_C

Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW

Notes

a. Derate 3 mW/_C above 25_C

Document Number: 70261

S-04030—Rev. E, 04-Jun-01

www.vishay.com

9-1

12 3

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