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2N5089 PDF预览

2N5089

更新时间: 2024-11-29 03:56:15
品牌 Logo 应用领域
TAITRON 晶体晶体管
页数 文件大小 规格书
4页 124K
描述
SMALL SIGNAL GENERAL PURPOSE TRANSISTORS

2N5089 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:unknown
风险等级:5.82最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):450JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHz

2N5089 数据手册

 浏览型号2N5089的Datasheet PDF文件第2页浏览型号2N5089的Datasheet PDF文件第3页浏览型号2N5089的Datasheet PDF文件第4页 
SMALL SIGNAL GENERAL  
PURPOSE TRANSISTORS  
2N5089  
NPN Epitaxial Silicon Transistors  
Features  
Application for Amplifier Circuit, Switching Circuit, Inverter  
RoHS Compliant  
Maximum Ratings (T Ambient=25ºC unless noted otherwise)  
Symbol  
V CEO  
V CBO  
V EBO  
IC  
Description  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Value  
25  
Unit  
V
Conditions  
Open Emitter  
30  
V
Open Base  
4.5  
V
Open Collector  
Collector Current - Continuous  
50  
mA  
625  
5.0  
mW  
Collector Power Dissipation  
PD  
mW/° C  
Derating above 25 ºC  
Operating Junction and Storage  
-55 to 150  
° C  
TJ,TSTG  
Thermal Characteristics  
Symbol  
Rth (j-a)  
Rth (j-c)  
Description  
Value  
Unit  
° C/W  
° C/W  
Thermal Resistance from Junction to Amber  
Thermal Resistance from Junction to Case  
357  
125  
Rev. A/WW  
Page 1 of 4  
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com  
Tel: (800)-247-2232 (800)-TAITRON (661)-257-6060  
Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415  

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