2N5064

更新时间： 2024-11-11 22:45:03

品牌	Logo	应用领域
恩智浦 - NXP		栅极
页数	文件大小	规格书
4页	21K
描述
Thyristor sensitive gate

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

2N5064 数据手册

Philips Semiconductors

Product specification

Thyristor

sensitive gate

2N5064

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated sensitive gate

SYMBOL PARAMETER

MAX. UNIT

thyristor in

plastic envelope,

intended for use in general purpose

switching and phase control

applications. This device is intended

to be interfaced directly to

microcontrollers, logic integreated

circuits and other low power gate

trigger circuits.

V_DRM

V_RRM

I_T(AV)

Repetitive peak off-state voltages

200

Average on-state current

RMS on-state current

0.5

0.8

I_T(RMS)

I_TSM

Non-repetitive peak on-state current

PINNING - TO92 variant

PIN CONFIGURATION

SYMBOL

DESCRIPTION

anode

gate

cathode

2 1

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_DRM, V_RRMRepetitive peak off-state

voltages

200

I_T(AV)

Average on-state current half sine wave

T_c≤ 67 ˚C

0.51

0.255

0.8

T_c≤ 102 ˚C

all conduction angles

I_T(RMS)

I_TRM

RMS on-state current

Repetitive peak on-state

current

I_TSM

Non-repetitive peak

on-state current

half sine wave; T_a= 25 ˚C prior to surge;

t = 8.3 ms

I²t

I_GM

I²t for fusing

0.4

0.1

0.01

150

125

A²s

˚C

Peak gate current

Peak gate voltage

Peak reverse gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

T_a= 25˚C, t_p= 300µs; f = 120 Hz

V_GM

V_RGM

P_GM

P_G(AV)

T_stg

T_j

T_a= 25˚C

T_a= 25˚C, over any 16 ms period

-65

October 1997

Rev 1.200

12 3 4

中文翻译

下载PDF

2N5064 替代型号

型号	品牌	替代类型	描述	数据表
S2A	NKK	功能相似	Medium Capacity Standard Size Toggles

与2N5064相关器件

型号	品牌	获取价格	描述	数据表
2N5064,112	NXP	获取价格	2N5064
2N5064-18	MOTOROLA	获取价格	0.8A, 200V, SCR, TO-226AA
2N5064-5	MOTOROLA	获取价格	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-226AA
2N506473AP	TECCOR	获取价格	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-92, TO
2N506475	TECCOR	获取价格	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-92, TO
2N506475AP	TECCOR	获取价格	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-92, TO
2N5064APM	CENTRAL	获取价格	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(RRM), 1 Element, TO-92
2N5064APMLEADFREE	CENTRAL	获取价格	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(RRM), 1 Element, TO-92,
2N5064G	ONSEMI	获取价格	SILICON CONTROLLED RECTIFIERS 0.8 A RMS, 30 â
2N5064RLRA	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers