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2N4953_02 PDF预览

2N4953_02

更新时间: 2024-02-26 02:41:20
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
4页 60K
描述
NPN General Purpose Amplifier

2N4953_02 数据手册

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2N4953  
NPN General Purpose Amplifier  
This device designed for use as general purpose amplifier and  
switches requiring collector currents to 500mA.  
Sourced from Process 10.  
TO-92  
1. Emitter 2. Collector 3. Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings* T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
30  
60  
CEO  
V
CBO  
EBO  
5.0  
V
I
- Continuous  
1.0  
A
C
T , T  
Operating and Storage Junction Temperature Range  
-55 ~ +150  
°C  
J
ST  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
©2002 Fairchild Semiconductor Corporation  
Rev. B, July 2002  

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