Datasheet > 2N4900

2N4900

更新时间： 2024-11-28 06:16:39

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	127K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2N4900 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N4898 2N4899 2N4900

DESCRIPTION

··With TO-66 package

·Low collector saturation voltage

·Excellent safe operating area

·2N4900 complement to type 2N4912

APPLICATIONS

·Designed for driver circuits,switching

and amplifier applications

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-66) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

-40

UNIT

2N4898

2N4899

2N4900

2N4898

2N4899

2N4900

V_CBO

Collector-base voltage

Open emitter

-60

-80

-40

V_CEO

Collector-emitter voltage

Open base

-60

-80

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

-5

-1.0

-4.0

-1.0

Collector current-peak

Base current

P_D

T_j

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

150

-65~200

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

VALUE

UNIT

R_{th j-c}

7.0

℃/W

12 3

中文翻译

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