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2N4857 PDF预览

2N4857

更新时间: 2024-02-02 11:47:30
品牌 Logo 应用领域
INTERFET 晶体晶体管场效应晶体管
页数 文件大小 规格书
1页 69K
描述
N-Channel Silicon Junction Field-Effect Transistor

2N4857 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SMALL OUTLINE, R-CDSO-N3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.22
配置:SINGLE最小漏源击穿电压:40 V
最大漏源导通电阻:40 ΩFET 技术:JUNCTION
最大反馈电容 (Crss):8 pFJESD-30 代码:R-CDSO-N3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

2N4857 数据手册

  
01/99  
B-15  
2N4856, 2N4857, 2N4858, 2N4859, 2N4860, 2N4861  
N-Channel Silicon Junction Field-Effect Transistor  
Absolute maximum ratings at T = 25¡C  
¥ Choppers  
¥ Commutators  
¥ Analog Switches  
A
2N4856, 2N4857, 2N4858  
2N4859, 2N4860, 2N4861  
Reverse Gate Source Voltage  
Reverse Gate Drain Voltage  
Continuous Device Dissipation  
Power Derating  
– 40 V  
– 40 V  
– 30 V  
– 30 V  
1.8 W  
1.8 W  
10 mW/°C  
50 mA  
10 mW/°C  
50 mA  
Continuous Forward Gate Current  
2N4856  
2N4859  
2N4857  
2N4860  
2N4858  
2N4861  
Process NJ132  
Test Conditions  
At 25°C free air temperature:  
Static Electrical Characteristics  
Min Max Min Max Min Max Unit  
Gate Source Breakdown Voltage  
2N4856, 2N4857, 2N4858  
2N4859, 2N4860, 2N4861  
V
– 40  
– 30  
– 40  
– 30  
– 40  
– 30  
V
V
I = 1µA, V = ØV  
G DS  
(BR)GSS  
I = 1µA, V = ØV  
G
DS  
– 250  
– 500  
– 250  
– 500  
– 10 – 2  
20  
– 250  
– 500  
– 250  
– 500  
– 250 pA  
– 500 nA  
– 250 pA  
– 500 nA  
V
= – 20V, V = ØV  
DS  
Gate Reverse Current  
2N4856, 2N4857, 2N4858  
GS  
I
GSS  
V
= – 20V, V = ØV  
DS  
T = 150°C  
A
GS  
V
= – 15V, V = ØV  
DS  
Gate Reverse Current  
2N4859, 2N4860, 2N4861  
GS  
I
GSS  
V
= – 15V, V = ØV  
DS  
T = 150°C  
A
GS  
Gate Source Cutoff Voltage  
V
– 4  
50  
– 6 – 0.8 – 4  
V
V = 15V, I = 0.5 nA  
DS D  
GS(OFF)  
Drain Saturation Current (Pulsed)  
I
100  
250  
500  
8
80  
mA  
pA  
nA  
V
= 15V, V = ØV  
DSS  
DS GS  
250  
250  
500  
V
= 15V, V = – 10V  
GS  
DS  
I
Drain Cutoff Current  
D(OFF)  
500  
V
= 15V, V = – 10V  
GS  
T = 150°C  
A
DS  
0.75  
(20)  
0.5  
(10)  
0.5  
(5) (mA)  
V
V
Drain Source ON Voltage  
V
= ØV, I = ( )  
D
DS(ON)  
GS  
Dynamic Electrical Characteristics  
Common Source ON Resistance  
Common Source Input Capacitance  
r
25  
18  
40  
18  
60  
18  
V
= ØV, I = Ø A  
f = 1 kHz  
f = 1 MHz  
ds(on)  
GS D  
C
pF  
V
= ØV, V = – 10V  
iss  
DS GS  
Common Source Reverse  
Transfer Capacitance  
C
8
8
8
pF  
V
= ØV, V = – 10V  
f = 1 MHz  
rss  
DS GS  
Switching Characteristics  
6
6
10  
ns  
Turn ON Delay Time  
t
t
t
(20)  
[–10]  
(10)  
[– 6]  
(5) (mA)  
[– 4] [V]  
d(on)  
V
= 10V, V = ØV  
GS  
= ( )  
DD  
I
D(ON)  
3
4
(10)  
[– 6]  
10  
ns  
V
= [ ]  
GS(OFF)  
Rise Time  
(20)  
[–10]  
(5) (mA)  
[– 4] [V]  
r
(2N4856, 2N4859) RL = 465  
(2N4857, 2N4860) RL = 953Ω  
(2N4858, 2N4861) RL = 1910Ω  
25  
(20)  
[–10]  
50  
(10)  
[– 6]  
100  
ns  
Turn OFF Delay Time  
(5) (mA)  
[– 4] [V]  
d(off)  
TOÐ18 Package  
Surface Mount  
SMP4856, SMP4857, SMP4858,  
SMP4859, SMP4860, SMP4861  
See Section G for Outline Dimensions  
Pin Configuration  
1 Source, 2 Drain, 3 Gate &Case  
1000 N. Shiloh Road, Garland, TX 75042  
(972) 487-1287 FAX (972) 276-3375  
www.interfet.com  

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