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2N4428 PDF预览

2N4428

更新时间: 2024-11-08 22:49:23
品牌 Logo 应用领域
ASI 晶体小信号双极晶体管射频小信号双极晶体管放大器
页数 文件大小 规格书
1页 31K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

2N4428 技术参数

生命周期:Active零件包装代码:TO-39
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.21Is Samacsys:N
最大集电极电流 (IC):0.425 A基于收集器的最大容量:3.5 pF
集电极-发射极最大电压:35 V配置:SINGLE
最小直流电流增益 (hFE):20最高频带:HIGH FREQUENCY BAND
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN最大功率耗散 (Abs):3.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):1000 MHz
Base Number Matches:1

2N4428 数据手册

  
2N4428  
NPN SILICON HIGH FREQUENCY TRANSISTOR  
PACKAGE STYLE TO-39  
DESCRIPTION:  
The 2N4428 is a High Frequency  
Transistor Designed for Amplifier and  
Oscillator Applications.  
MAXIMUM RATINGS  
425 mA  
IC  
30 V  
VCE  
PDISS  
TJ  
3.5 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +200 OC  
50 OC/W  
TSTG  
θJC  
1 = EMITTER  
2 = BASE  
3 = COLLECTOR  
NONE  
CHARACTERISTICS TC = 25 O  
C
SYMBOL  
BVCEO  
TEST CONDITIONS  
MINIMUM  
TYPICAL MAXIMUM  
UNITS  
IC = 20 mA  
IC = 20 mA  
IC = 100 µA  
VCE = 55 V  
VCE = 5.0 V  
35  
V
BVCER  
BVEBO  
ICEX  
55  
V
RBE = 10 Ω  
3.5  
V
VBE = -1.5 V  
1.0  
mA  
IC = 50 mA  
IC = 400 mA  
20  
5.0  
200  
hFE  
---  
ft  
VCE = 20 V  
VCB = 28 V  
IC = 50 mA  
f = 200 MHz  
f = 1.0 MHz  
700  
1000  
MHz  
pF  
COB  
1.5  
3.5  
75  
Pin  
η
mW  
%
VCC = 28 V  
Pout = 750 mW Rs = 50  
f = 200 MHz  
35  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004  
Specifications are subject to change without notice.  

2N4428 替代型号

型号 品牌 替代类型 描述 数据表
2N5943 ASI

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