Datasheet > 2N4427

2N4427

更新时间： 2024-09-16 22:49:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管射频微波放大器
页数	文件大小	规格书
6页	245K
描述
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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2N4427 数据手册

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

2N4427

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

Features

Silicon NPN, To-39 packaged VHF/UHF Transistor

1 Watt Minimum Power Output @ 175 MHz

500 MHz Current-Gain Bandwidth Product @ 50mA

Power Gain, G_PE= 10dB (Min) @ 175 MHz

1. Emitter

2. Base

3. Collector

TO-39

DESCRIPTION:

Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and

output stages. Also suitable for oscillator and frequency-multiplier functions.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

V_CEO

V_CBO

V_EBO

I_C

Parameter

Value

Unit

Vdc

Collector-Emitter

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

2.0

400

Thermal Data

1.0

5.71

Watts

mW/ ºC

Total Device Dissipation @ T = 25ºC

Derate above 25ºC

MSC1301.PDF 10-25-99

12 3 4 5 6

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与2N4427相关器件

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2N4428	ASI	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
2N4429	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
2N4429	NJSEMI	获取价格	SI NPN POWER BJT
2N443	DIGITRON	获取价格	TRANSISTOR,BJT,PNP,15A I(C),TO-36
2N4430	NJSEMI	获取价格	Trans GP BJT NPN 40V 0.001A 4-Pin MT66
2N4431	NJSEMI	获取价格	Trans GP BJT NPN 40V 0.002A 4-Pin MT66
2N4436	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 500MA I(C) \| TO-222AB
2N4437	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 500MA I(C) \| TO-222AB
2N4438	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 200MA I(C) \| TO-39