Datasheet > 2N4403

2N4403

更新时间： 2024-10-01 21:53:31

品牌	Logo	应用领域
CDIL		晶体晶体管开关局域网
页数	文件大小	规格书
6页	154K
描述
NPN PNP SILICON PLANAR EPITAXIAL TRANSISTORS

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中文翻译

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数据手册

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2N4403 数据手册

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

TO-92 Plastic Package

2N4400, 2N4401

2N4402, 2N4403

2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS

2N4402, 4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Switching Applications

DIM

MIN

MAX

5,33

5,20

4,19

0,55

0,50

4,32

4,45

3,18

0,41

0,35

5 DEG

1,14

1,40

1,53

–

1,14

12,70

1.982

2.082

ALL DIMENSIONS IN M.M.

2 3

1 = EMITTER

2 = BASE

3 = COLLECTOR

ABSOLUTE MAXIMM RATINGS

Rating

Symbol

2N4400/ 01

2N4402/ 03

Units

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

CEO

CBO

EBO

Collector Current Continuous

Power Dissipation At Ta=25 ºC

Derate Above 25 ºC

600

625

m A

5.0

mW/ ºC

Power Dissipation At Tc=25 ºC

Derate Above 25 ºC

1.5

mW/ ºC

ºC

Operating & Storage

T ,T

-55 to +150

stg

Junction Temperature Range

THERMAL RESISTANCE

Junction to Case

83.3

200

ºC/ W

th (j-c)

Junction to Ambient

th (j-a)

ELECTRICAL CHARACTERISTICS (Ta =25 ºC unless otherwise specified)

Continental Device India Limited

Data Sheet

Page 1 of 6

12 3 4 5 6

中文翻译

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