Datasheet > 2N4401_09

2N4401_09

更新时间： 2024-09-23 07:28:39

品牌	Logo	应用领域
美微科 - MCC		放大器
页数	文件大小	规格书
4页	82K
描述
NPN General Purpose Amplifier

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中文翻译

获取价格

数据手册

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2N4401_09 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

2N4401

Micro Commercial Components

Features

•

ꢀ

Through Hole Package

Capable of 600mWatts of Power Dissipation

NPN General

Purpose Amplifier

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0 and MSL rating 1

ꢀ

Marking:Type number

•

Lead Free Finish/Rohs Compliant ("P"Suffix designates

Compliant. See ordering information)

TO-92

Electrical Characteristics @ 25°C Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_BL

Collector-Emitter Breakdown Voltage*

(I_C=1.0mAdc, I_B=0)

Vdc

Collector-Base Breakdown Voltage

(I_C=10mAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=0.1mAdc, I_C=0)

Base Cutoff Current

6.0

Vdc

0.1

µAdc

(V_CE=35Vdc, V_BE=0.4Vdc)

Collector Cutoff Current

(V_CE=35Vdc, V_BE=0.4Vdc)

I_CEX

ON CHARACTERISTICS

h_FE

DC Current Gain*

(I_C=0.1mAdc, V_CE=1.0Vdc)

(I_C=1.0mAdc, V_CE=1.0Vdc)

(I_C=10mAdc, V_CE=1.0Vdc)

(I_C=150mAdc, V_CE=1.0Vdc)

(I_C=500mAdc, V_CE=1.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=150mAdc, I_B=15mAdc)

(I_C=500mAdc, I_B=50mAdc)

Base-Emitter Saturation Voltage

(I_C=150mAdc, I_B=15mAdc)

(I_C=500mAdc, I_B=50mAdc)

100

300

V_CE(sat)

0.4

Vdc

0.75

V_BE(sat)

0.75

250

0.95

1.2

SMALL-SIGNAL CHARACTERISTICS

f_T

Current Gain-Bandwidth Product

(I_C=20mAdc, V_CE=10Vdc, f=100MHz)

Collector-Base Capacitance

(V_CB=5.0Vdc, I_E=0, f=100kHz)

Emitter-Base Capacitance

MHz

DIMENSIONS

C_cb

C_eb

6.5

INCHES

MIN

.170

.550

.010

.130

.010

MIN

DIM

MAX

NOTE

.190

.590

.020

.160

.104

4.33

4.30

13.97

0.36

3.30

2.44

4.83

14.97

0.56

3.96

2.64

(V_BE=0.5Vdc, I_C=0, f=100kHz)

30.0

SWITCHING CHARACTERISTICS

t_d

t_r

Delay Time

Rise Time

Storage Time

Fall Time

(V_CC=30Vdc, V_BE=0.2Vdc

I_C=150mAdc, I_B1=15mAdc)

(V_CC=30Vdc, I_C=150mAdc

I_B1=I_B2=15mAdc)

225

t_s

t_f

*Pulse Width ≤ 300µs, Duty Cycle≤ 2.0%

w w w.m c c s e m i.c o m

1 of 4

Revision: 5

2009/04/21

12 3 4

中文翻译

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与2N4401_09相关器件

型号	品牌	获取价格	描述	数据表
2N4401_10	ONSEMI	获取价格	General Purpose Transistors
2N4401_11	MCC	获取价格	NPN General Purpose Amplifier
2N4401_D81Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2N4401_J61Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2N4401_S00Z	FAIRCHILD	获取价格	Transistor
2N4401-18	TI	获取价格	40V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3
2N4401-18FLEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F,
2N4401-18R	CENTRAL	获取价格	Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R,
2N4401-18RLEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R,
2N4401-5	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon

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