是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | CYLINDRICAL, O-MBCY-W4 |
Reach Compliance Code: | compliant | 风险等级: | 5.21 |
其他特性: | LOW NOISE | 配置: | SINGLE |
FET 技术: | JUNCTION | 最大反馈电容 (Crss): | 2 pF |
JEDEC-95代码: | TO-72 | JESD-30 代码: | O-MBCY-W4 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | DEPLETION MODE |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | MATTE TIN (315) |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N4222LEADFREE | CENTRAL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-7 |
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2N4223 | INTERSIL |
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N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER |
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2N4223 | NJSEMI |
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N-CHANNEL JFETS |
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2N4224 | NJSEMI |
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N-CHANNEL JFETS |
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2N4224 | INTERSIL |
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N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER |
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2N4225 | MICROSEMI |
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Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 |
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2N4225E3 | MICROSEMI |
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Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 |
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2N4226 | ETC |
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TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-5 |
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2N4227 | ASI |
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Transistor |
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2N4227 | MICRO-ELECTRONICS |
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Transistor, |
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