是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.74 | JESD-609代码: | e3 |
峰值回流温度(摄氏度): | NOT SPECIFIED | 端子面层: | MATTE TIN OVER NICKEL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N4208LEADFREE | CENTRAL |
获取价格 |
RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP, TO-18 |
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2N4209 | VISHAY |
获取价格 |
PNP SILICON TRANSISTOR |
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2N4209 | CENTRAL |
获取价格 |
Small Signal Transistors |
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2N4209 | NJSEMI |
获取价格 |
SI PNP LP HF BJT |
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2N4209 | ASI |
获取价格 |
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, PNP, TO-18, TO-18, 3 P |
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2N420A | ETC |
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TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 5A I(C) | TO-3 |
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2N4210 | ETC |
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TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | TO-210AE |
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2N4210E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 |
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2N4211 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | TO-210AE |
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2N4211E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 20A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 |
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