2N4003K

更新时间： 2024-11-28 05:57:47

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
6页	1029K
描述
N-Channel Enhancement Mode Power MOSFET

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中文翻译

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技术参数
数据手册

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2N4003K 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

2N4003K 数据手册

2N4003K

3 DRAIN

N-Channel Enhancement

Mode Power MOSFET

DRAIN CURRENT

0.5 AMPERES

GATE

P b

Lead(Pb)-Free

DRAIN SOUCE VOLTAGE

30 VOLTAGE

* Gate

Pretection

Diode

Features:

SOURCE

* Low Gate Voltage Threshold Vgs(th)

to Facilitate Drive Circuit Design.

* Low Gate Charge for Fast Switching.

* ESD Protected Gate.

* Minimum Breakdown Voltage Rating of 30V.

Application:

* Level Shifters

* Level Switches

SOT-23

* Low Side Load Switches

* Portable Applications

Maximum Ratings^(T_A^{=25℃ Unless Otherwise Specified)}

Rating

Symbol

Value

Unit

Drain-Source Voltage

V_DS

V_GS

Gate-Source Voltage

¹,Steady State

(T_A=25°C)

(T_A=85°C)

Continuous Drain Current

0.5

I_D

P_D

I_D

0.37

0.69

Power Dissipation¹

,Steady State

,t<10s

Continuous Drain Current¹

(T_A=25°C)

(T_A=85°C)

0.56

0.40

0.83

Power Dissipation¹

P_D

,t<5s

I_DM

1.7

Pulsed Drain Current

Maximum Junction-ambient

,Steady State¹

,t<10s¹

180

150

300

R_θJA

°C/W

,Steady State²

Operating Junction Temperature Range

Storage Temperature Range

+150

-55~+150

1.0

°C

T_J

T_stg

Source Current (Body Diode)

I _S

Lead Temperature for Soldering Purposes (1/8” from case 10s)

260

°C

T_L

Note: 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

2. Surface−mounted on FR4 board using the minimum recommended pad size.

Device Marking

2N4003K = TR8

WEITRON

http://www.weitron.com.tw

1/6

08-Sep-09

12 3 4 5 6

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