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2N3906G-G PDF预览

2N3906G-G

更新时间: 2024-11-27 13:04:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关PC
页数 文件大小 规格书
4页 158K
描述
Transistor

2N3906G-G 数据手册

 浏览型号2N3906G-G的Datasheet PDF文件第2页浏览型号2N3906G-G的Datasheet PDF文件第3页浏览型号2N3906G-G的Datasheet PDF文件第4页 
2N3906  
PNP GENERAL PURPOSE SWITCHING TRANSISTOR  
40 Volts  
625 mWatts  
VOLTAGE  
POWER  
FEATURES  
• PNP epitaxial silicon, planar design  
• Collector-emitter voltage VCE = 40V  
• Collector current IC = -200mA  
• Pb free product are available :99% Sn above can meet RoHS  
environment substance directive request  
MECHANICAL DATA  
Case: TO-92  
Terminals: Solderable per MIL-STD-750, Method 2026  
Approx Weight : 0.02grams  
Marking : S2A  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VCEO  
VALUE  
-40  
UNIT  
V
Collector - Emitter Voltage  
Collector - Base Voltage  
Emitter - Base Voltage  
Collector Current - Continuous  
Max Power Dissipation  
Storage Temperature  
VCBO  
VEBO  
I C  
-40  
-5.0  
V
V
-200  
mA  
mW  
OC  
OC  
PTOT  
TSTG  
TJ  
625  
-55 to 150  
-55 to 150  
Junction Temperature  
THERMALCHARACTERISTICS  
PARAMETER  
SYMBOL  
RθJA  
VALUE  
200  
UNITS  
OC / W  
Thermal Resistance, Junction to Ambient  
REV.0-DEC.12.2005  
PAGE . 1  

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