Datasheet > 2N3906

2N3906

更新时间： 2024-11-27 12:53:35

品牌	Logo	应用领域
TYSEMI		晶体开关放大器晶体管 PC
页数	文件大小	规格书
1页	66K
描述
PNP silicon epitaxial planar transistor for switching and Amplifier applications

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2N3906 数据手册

Product specification

2N3906

Features

PNP silicon epitaxial planar transistor for switching and

Amplifier applications

1 EMITTER

2 BASE

3 COLLECTOR

Absolute Maximum Ratings Ta = 25

Parameter

Collector- Base Voltage

Symbol

Rating

-40

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector - Emitter Voltage

Emitter - Base Voltage

-40

-5

Collector Current- Continuous

Collector Dissipation

-0.2

P^C

0.625

-55 to 150

Junction and Storage Temperature

T^J, T^stg

Electrical Characteristics Ta = 25

Parameter

Symbol

V^CBO

V^CEO

V^EBO

Ic^BO

Testconditons

Min

-40

-5

Typ

Max

Unit

Collector - base breakdown voltage

Collector - emitter breakdown voltage

Emitter- base breakdown voltage

Collector cut-off current

Ic= -100 ìA I^E=0

Ic= -1 mA I^B=0

I^E= -100 ìA I^C=0

V^CB= -40 V , I^E=0

-0.1

-50

ìA

Collector cut-off current

Ic^EO

V^CE= -40 V , V^BE(off)=-3V

VEB= -5V , IC=0

Emitter cut-off current

I^EBO

-0.1

400

V^CE= -1V, I^C= -10mA

V^CE= -1V, I^C= -50mA

V^CE= -1V, I^C= -100mA

100

DC current gain

h^FE

Collector- emitter saturation voltage

Base - emitter saturation voltage

Delay time

V^CE(sat)I^C=-50 mA, I^B= -5mA

V^BE(sat)I^C=-50 mA, I^B= -5mA

-0.4

-0.95

t^d

V^CC=-3.0V,V^BE=0.5V

IC=-10mA,IB1=-1.0mA

V^CC=-3.0V,I^C=-10mA

I^B1=I^B2=-1.0mA

Rise time

Storage time

t^s

t^f

225

Fall time

Transition frequency

f^T

V^CE= -20V, I^C= -10mA, f=100MHz

250

MHz

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