Datasheet > 2N3904O-G

2N3904O-G

更新时间： 2024-09-13 20:09:59

品牌	Logo	应用领域
WEITRON		/
页数	文件大小	规格书
4页	510K
描述
Transistor

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技术参数
数据手册

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2N3904O-G 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

2N3904O-G 数据手册

2N3904

NPN General Purpose Transistors

* “G” Lead(Pb)-Free

TO-92

1. EMITTER

2. BASE

3. COLLECTOR

ABSOLUTE MAXIMUM RATINGS

(Ta=25 C)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base VOltage

Collector Current

Symbol

Unit

Vdc

mAdc

Value

CEO

CBO

6.0

200

EBO

0.625

150

Total Device Dissipation T =25 C

Junction Temperature

Storage,Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage (I = 1.0 mAdc, I =0)

Vdc

(BR)CEO

Vdc

Collector-Base Breakdown Voltage (I = 100 µAdc, I =0)

(BR)CBO

Vdc

6.0

Emitter-Base Breakdown Voltage (I = 100 µAdc, I =0)

(BR)EBO

uAdc

CE0

0.1

Collector Cutoff Current (V = 40 Vdc, I =0)

uAdc

Collector Cutoff Current (V = 60 Vdc, I =0)

CBO

EBO

Emitter Cutoff Current (V = 5.0V c, I =0)

WEITRON

http://www.weitron.com.tw

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