Datasheet > 2N3904_11

2N3904_11

更新时间： 2024-09-17 12:50:11

品牌	Logo	应用领域
美微科 - MCC		放大器
页数	文件大小	规格书
5页	266K
描述
NPN General Purpose Amplifier

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中文翻译

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数据手册

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2N3904_11 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

2N3904

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

NPN General

Purpose Amplifier



Capable of 600mW of Power Disspation and 200mA Ic



Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Through Hole Package

Marking:Type number

TO-92

Electrical Characteristics @ 25°C Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_BL

Collector-Emitter Breakdown Voltage*

(I_C=1.0mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=10µAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=10µAdc, I_C=0)

Base Cutoff Current

Vdc

6.0

Vdc

nAdc

(V_CE=30Vdc, V_BE=3.0Vdc)

Collector Cutoff Current

(V_CE=30Vdc, V_BE=3.0Vdc)

I_CEX

ON CHARACTERISTICS

h_FE

DC Current Gain*

(I_C=0.1mAdc, V_CE=1.0Vdc)

(I_C=1.0mAdc, V_CE=1.0Vdc)

(I_C=10mAdc, V_CE=1.0Vdc)

(I_C=50mAdc, V_CE=1.0Vdc)

(I_C=100mAdc, V_CE=1.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=10mAdc, I_B=1.0mAdc)

(I_C=50mAdc, I_B=5.0mAdc)

Base-Emitter Saturation Voltage

(I_C=10mAdc, I_B=1.0mAdc)

(I_C=50mAdc, I_B=5.0mAdc)

100

300

V_CE(sat)

0.2

0.4

Vdc

V_BE(sat)

0.65

250

0.85

0.95

SMALL-SIGNAL CHARACTERISTICS

f_T

Current Gain-Bandwidth Product

(I_C=10mAdc, V_CE=20Vdc, f=100MHz)

Output Capacitance

(V_CB=5.0Vdec, I_E=0, f=1.0MHz)

Input Capacitance

(V_BE=0.5Vdc, I_C=0, f=1.0MHz)

Noise Figure

(I_C=100µAdc, V_CE=5.0Vdc, R_S=1.0kΩ

f=10Hz to 15.7kHz)

MHz

C_obo

C_ibo

4.0

8.0

5.0

DIMENSIONS

INCHES

DIM

MIN

.170

.550

.010

.130

.096

MAX

.190

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

.190

.590

.020

.160

.104

SWITCHING CHARACTERISTICS

t_d

t_r

t_s

t_f

Delay Time

Rise Time

Storage Time

Fall Time

(V_CC=3.0Vdc, V_BE=0.5Vdc

I_C=10mAdc, I_B1=1.0mAdc)

(V_CC=3.0Vdc, I_C=10mAdc

I_B1=I_B2=1.0mAdc)

200

*Pulse Width ≤ 300µs, Duty Cycle≤ 2.0%

www.mccsemi.com

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Revision: A

2011/01/01

12 3 4 5

中文翻译

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与2N3904_11相关器件

型号	品牌	获取价格	描述	数据表
2N3904_12	UTC	获取价格	NPN GENERAL PURPOSE AMPLIFIER
2N3904_D27ZS00Z	ROCHESTER	获取价格	Small Signal Bipolar Transistor
2N3904_D28Z	ROCHESTER	获取价格	Small Signal Bipolar Transistor
2N3904_D28Z	FAIRCHILD	获取价格	Transistor
2N3904_J25Z	FAIRCHILD	获取价格	Transistor
2N3904-18F	CENTRAL	获取价格	Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F,
2N3904-18FLEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F,
2N3904-18R	CENTRAL	获取价格	Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R,
2N3904-18RLEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R,
2N3904-5T1	CENTRAL	获取价格	Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-5T1,

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