Datasheet > 2N3904_10

2N3904_10

更新时间： 2024-11-07 07:28:35

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	382K
描述
NPN General Purpose Transistor

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中文翻译

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数据手册

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2N3904_10 数据手册

2N3904

0.2A, 60V

NPN General Purpose Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

TO-92

ꢀ

Power Dissipation P_CM: 625mW (Ta=25°C)

Collector Current I_CM: 200mA

Collector – Base Voltage V_(BR)CBO: 60V

1Emitter

2Base

3Collector

CLASSIFICATION OF h_FE(1)

Millimeter

REF.

Min.

4.40

4.30

12.70

3.30

0.36

Max.

4.70

3.81

0.56

0.51

Product-Rank

Range

2N3904-O

2N3904-Y

200~300

2N3904-G

300~400

100~200

1.27 TYP.

1.10

2.42

0.36

2.66

0.76

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS ^{(T = 25°C unless otherwise specified)}

Parameter

Symbol

V_CBO

Ratings

Unit

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

V_CEO

V_EBO

Collector Current -Continuous

Cpllector Power Dissipation

Junction, Storage Temperature

I_C

0.2

625

P_C

T_J, T_STG

+150, -55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

Parameter

Symbol Min.

Typ.

Max.

Unit

Test Conditions

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter - Base Breakdown Voltage

Collector Cut-Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=10µA, I_E=0

I_C=1mA, I_B=0

I_E=10µA, I_C=0

0.1

400

µA

V_CB=60V, I_E=0

Collector Cut-Off Current

I_CEO

V_CE=40V, I_B=0

Emitter Cut-Off Current

I_EBO

100

V_EB=5V, I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

V_CE=1V, I_C=10mA

V_CE=1V, I_C=50mA

I_C=50mA, I_B=5mA

V_CE=20V, I_C=10mA, f=100MHz

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

0.3

0.95

300

MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

31-Dec-2010 Rev.B

Page 1 of 3

12 3

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