Datasheet > 2N3904

2N3904

更新时间： 2024-11-06 12:53:35

品牌	Logo	应用领域
TYSEMI		晶体开关放大器晶体管
页数	文件大小	规格书
1页	66K
描述
NPN silicon epitaxial planar transistor for switching and Amplifier applications

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2N3904 数据手册

Product specification

2N3904

Features

NPN silicon epitaxial planar transistor for switching and

Amplifier applications

1 EMITTER

2 BASE

3 COLLECTOR

Absolute Maximum Ratings Ta = 25

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

0.2

P^C

0.625

150

T^J

Storage Temperature

T^stg

-55 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^CBO

Testconditons

Min

Typ

Max

Unit

Collecto- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector cut-off current

Ic= 100 ìA I^E=0

Ic= 1 mA I^B=0

I^E= 10 I^C=0

V^CEO

V^EBO

Ic^BO

Ic^EO

I^EBO

V^CB= 60 V , I^E=0

V^CE= 40 V , I^B=0

V^EB= 5V , I^C=0

0.1

300

Collector cut-off current

Emitter cut-off current

V^CE= 1V, I^C= 10mA

V^CE= 1V, I^C= 50mA

V^CE= 1V, I^C= 100mA

100

DC current gain

h^FE

Collector-emitter saturation voltage

Base - emitter saturation voltage

Delay time

V^CE(sat)I^C=50 mA, I^B= 5mA

VBE(sat) IC= 50 mA, IB= 5mA

0.3

0.95

t^d

t^r

V^CC=3.0V,V^BE=-0.5V

I^C=10mA,I^B1=-I^B2=1.0mA

V^CC=3.0V,I^C=10mA

Rise time

Storage time

t^s

t^f

200

Fall time

I^B1=-I^B2=1.0mA

Transition frequency

f^T

V^CE= 20V, I^C= 10mA,f=100MHz

300

MHz

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