Datasheet > 2N3799X_09

2N3799X_09

更新时间： 2024-11-07 07:28:31

品牌	Logo	应用领域
SEME-LAB		晶体晶体管局域网
页数	文件大小	规格书
3页	248K
描述
SILICON PLANAR EPITAXIAL PNP TRANSISTOR

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中文翻译

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数据手册

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2N3799X_09 数据手册

SILICON PLANAR EPITAXIAL

PNP TRANSISTOR

2N3799X

•

Low Noise

Hermetic TO-18 Metal package.

Ideally suited for Low Level Amplifier.

Instrumentation Amplifiers and General Purpose Applications

•

Screening Options Available

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

-60V

CBO

CEO

EBO

-50V

-5V

Continuous Collector Current

Total Power Dissipation at

-50mA

T = 25°C

360mW

Derate Above 25°C

2.06mW/°C

1.2W

T = 25°C

Total Power Dissipation at

Derate Above 25°C

6.86mW/°C

-65 to +200°C

Junction Temperature Range

Storage Temperature Range

stg

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ. Max. Units

486.11 °C/W

Thermal Resistance, Junction To Ambient

Thermal Resistance, Junction To Case

θJA

145.83 °C/W

θJC

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 8240

Issue 1

Page 1 of 3

Website: http://www.semelab-tt.com

12 3

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