型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3561 | TI |
获取价格 |
2N3561 | |
2N3561 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 2A I(T)RMS, 1600mA I(T), 100V V(DRM), 100V V(RRM), 1 Element | |
2N3562 | NJSEMI |
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SCR, V(DRM) = 200V TO 299.9V | |
2N3562 | TI |
获取价格 |
2N3562 | |
2N3562 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 2A I(T)RMS, 1600mA I(T), 200V V(DRM), 200V V(RRM), 1 Element | |
2N3563 | ETC |
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TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 50MA I(C) | TO-106 | |
2N3564 | NJSEMI |
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NPN SILICON TRASISTOR | |
2N3564 | ONSEMI |
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TRANSISTOR TRANSISTOR,BJT,NPN,15V V(BR)CEO,50MA I(C),TO-106, BIP General Purpose Small Sig | |
2N3565 | NJSEMI |
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SI NPN LO-PWR BJT | |
2N3565 | FAIRCHILD |
获取价格 |
NPN General Purpose Amplifier |