生命周期: | Active | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.46 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 10 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JEDEC-95代码: | TO-61 | JESD-30 代码: | O-MUPM-D3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 200 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 117 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | SOLDER LUG |
端子位置: | UPPER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 30 MHz | VCEsat-Max: | 1.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N3491 | NJSEMI | Trans GP BJT NPN 80V 7.5A 3-Pin TO-61 |
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2N3491E3 | MICROSEMI | Power Bipolar Transistor, 7.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, |
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2N3492 | NJSEMI | Trans GP BJT NPN 100V 7.5A 3-Pin TO-61 |
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2N3492E3 | MICROSEMI | Power Bipolar Transistor, 7.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, |
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2N3494 | RAYTHEON | Medium Current General Purpose Amplifiers and Switches |
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2N3494 | CENTRAL | Small Signal Transistors |
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