Datasheet > 2N3442_12

2N3442_12

更新时间： 2024-09-17 12:30:51

品牌	Logo	应用领域
COMSET		高功率电源
页数	文件大小	规格书
3页	80K
描述
HIGH POWER INDUSTRIAL TRANSISTORS

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2N3442_12 数据手册

NPN 2N3442 – 2N4347

HIGH POWER INDUSTRIAL TRANSISTORS

NPN silicon transistors in Jedec TO-39 metal case.

They are designed for applictions in industrial and commercial equipment including high fidelity

audio amplifiers, series and shunts regulators and power switches.

Low Collector-Emitter Saturation Voltage.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

120

140

160

Collector-Emitter

Voltage

V_CEO

V_CB

V_EB

Collector-Base Voltage

Emitter-Base Voltage

15 (**)

100

117

0.57

0.67

Continuous

Peak

I_C

Collector Current

Base Current

Continuous

Peak

I_B

@ T_C= 25°

Derate above 25°

W/°C

°C

Total Device

Dissipation

P_D

T_J

T_S

Junction Temperature

Storage Temperature

-65 to +200

°C

(**) This data guaranteed in addition to JEDEC registered data.

THERMAL CHARACTERISTICS

Symbol

R_thJC

Ratings

Value

Unit

2N4347

2N3442

1.75

1.5

Thermal Resistance, Junction to Case

°C/W

12 3

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