Datasheet > 2N3390_01

2N3390_01

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器
页数	文件大小	规格书
7页	297K
描述
NPN General Purpose Amplifier

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2N3390_01 数据手册

Discr ete P OWER & Sign a l

Tech n ologies

2N3390

2N3391

2N3391A

2N3392

2N3393

TO-92

NPN General Purpose Amplifier

This device is designed for use as general purpose amplifiers

and switches requiring collector currents to 300 mA. Sourced

from Process 10. See PN100A for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

500

-55 to +150

T_J, T

stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

2N3390 / 3391/A / 3392 / 3393

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

625

5.0

83.3

mW/°C

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to Ambient

200

°C/W

1997 Fairchild Semiconductor Corporation

3390-93, Rev B

12 3 4 5 6 7

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