Datasheet > 2N3055

2N3055

更新时间： 2024-11-24 17:01:39

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描述
Silicon NPN Power Transistor

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中文翻译

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数据手册

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2N3055 数据手册

SILICON NPN POWER

TRANSISTOR

2N3055

Features:

•

High Gain At High Current.

Hermetic TO-3 (TO-204AA) Metal Package.

Ideally Suited For General Purpose Switching and Amplifier Applications.

Screening Options Available.

Absolute Maximum Ratings (T_A= 25°C unless otherwise noted)

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Continuous Collector Current

Base Cirrenr

100V

70V

CBO

CEO

EBO

15A

T = 25°C

Total Power Dissipation at

Derate Above 25°C

34.3mW/°C

117W

T = 25°C

Total Power Dissipation at

Derate Above 25°C

0.67W/°C

-65 to +200°C

Junction Temperature Range

Storage Temperature Range

stg

Thermal Properties

SYMBOL

PARAMETER

MAX

29.17

UNITS

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

θJA

θJC

1.5

Semelab Welwyn

General Note

TT Electronics | Welwyn Components Limited

Welwyn Electronics Park, Bedlington, Northumberland, NE22 7AA, UK

Ph: +44 (0) 1670 822181

TT Electronics reserves the right to make changes in product specification

without notice or liability. All information is subject to TT Electronics’ own

data and is considered accurate at time of going to print.

www.ttelectronics.com | Bedlington.sales@ttelectronics.com

Classification: Public

9313 Issue 3

Page 1 of 3

12 3

中文翻译

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