是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | unknown | 风险等级: | 5.69 |
峰值回流温度(摄氏度): | NOT SPECIFIED | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3032E3 | MICROSEMI |
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Silicon Controlled Rectifier, 0.785A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-18 | |
2N3033 | NJSEMI |
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N-P-N EPITAXIAL MESA SILICON TRANSISTORS | |
2N3034 | NJSEMI |
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N-P-N EPITAXIAL MESA SILICON TRANSISTORS | |
2N3035 | NJSEMI |
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N-P-N EPITAXIAL MESA SILICON TRANSISTORS | |
2N3036 | CENTRAL |
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Small Signal Bipolar Transistor, 1.2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | |
2N3036 | NJSEMI |
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Small Signal Bipolar Transistor | |
2N3036 | ONSEMI |
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1200mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5, TO-5, 3 PIN | |
2N3036 | SEME-LAB |
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Bipolar NPN Device in a Hermetically sealed TO39 | |
2N3036L | ETC |
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TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1.2A I(C) | TO-5 | |
2N3036L |
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Bipolar Junction Transistor |