Datasheet > 2N2907A

2N2907A

更新时间： 2024-11-21 22:49:23

品牌	Logo	应用领域
博卡 - BOCA		晶体开关晶体管局域网
页数	文件大小	规格书
2页	47K
描述
PNP SILICON PLANAR SWITCHING TRANSISTORS

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数据手册

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2N2907A 数据手册

PNP SILICON PLANAR SWITCHING TRANSISTORS

2N2906A

2N2907A

TO-18

Boca Semiconductor Corp.

BSC

Switching And Linear Application DC to VHF Amplifier Applications

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

2N2906A, 07A

UNIT

Collector -Emitter Voltage

Collector -Base Voltage

Emitter -Base Voltage

Collector Current Continuous

Power Dissipation @Ta=25 degC

Derate Above 25deg C

VCEO

VCBO

VEBO

5.0

600

400

2.28

1.8

mW/deg C

@ Tc=25 degC

Derate Above 25deg C

Operating And Storage Junction

Temperature Range

10.3

mW/deg C

deg C

Tj, Tstg

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

VALUE

MAX

MIN

5.0

UNIT

Collector -Emitter Voltage

Collector -Base Voltage

Emitter-Base Voltage

VCEO*

VCBO

VEBO

ICBO

IC=10mA,IB=0

IC=10uA.IE=0

IE=10uA, IC=0

VCB=50V, IE=0

Collector-Cut off Current

Ta=150 deg C

VCB=50V, IE=0

VCE=30V, VBE=0.5V

0.4

1.6

1.3

2.6

ICEX

Base Current

Collector Emitter Saturation Voltage VCE(Sat)* IC=150mA,IB=15mA

IC=500mA,IB=50mA

VBE(Sat) * IC=150mA,IB=15mA

IC=500mA,IB=50mA

Base Emitter Saturation Voltage

DC Current Gain

2N2906A

2N2907A

hFE

IC=0.1mA,VCE=10V

IC=1mA,VCE=10V

IC=10mA,VCE=10V

IC=150mA,VCE=10V*

IC=500mA,VCE=10V*

>40

40-120

>40

>75

>100

100-300

>50

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2N2907AC1	SEME-LAB	获取价格	SILICON PLANAR EPITAXIAL PNP TRANSISTOR