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2N2907A PDF预览

2N2907A

更新时间: 2024-11-23 14:52:31
品牌 Logo 应用领域
先科 - SWST 晶体管
页数 文件大小 规格书
5页 856K
描述
小信号晶体管

2N2907A 数据手册

 浏览型号2N2907A的Datasheet PDF文件第2页浏览型号2N2907A的Datasheet PDF文件第3页浏览型号2N2907A的Datasheet PDF文件第4页浏览型号2N2907A的Datasheet PDF文件第5页 
2N2907 / 2N2907A  
PNP Silicon Epitaxial Planar Transistor  
Features  
• The transistor is subdivided into one  
group according to its DC current gain.  
1. Emitter 2. Base 3. Collector  
TO-92 Plastic Package  
Applications  
For switching and AF amplifier  
Absolute Maximum Ratings (Ta = 25 )  
Parameter  
Symbol  
-VCBO  
Value  
60  
Unit  
V
V
Collector Base Voltage  
Collector Emitter Voltage  
2N2907  
2N2907A  
40  
60  
-VCEO  
Emitter Base Voltage  
Collector Current  
-VEBO  
-IC  
5
600  
V
mA  
mW  
Power Dissipation  
Ptot  
Tj  
625  
Junction Temperature  
Storage Temperature Range  
150  
Tstg  
- 55 to + 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Value  
200  
Unit  
/W  
Thermal Resistance from Junction to Ambient  
®
1 / 5  
Dated: 25/05/2022 Rev: 04  

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