生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.65 |
Is Samacsys: | N | 标称电路换相断开时间: | 30 µs |
关态电压最小值的临界上升速率: | 30 V/us | 最大直流栅极触发电流: | 40 mA |
最大直流栅极触发电压: | 3.5 V | 最大漏电流: | 5 mA |
通态非重复峰值电流: | 260 A | 最大通态电压: | 1.4 V |
最大通态电流: | 25000 A | 最高工作温度: | 150 °C |
最低工作温度: | -65 °C | 断态重复峰值电压: | 400 V |
子类别: | Silicon Controlled Rectifiers | 表面贴装: | NO |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2579 | NJSEMI |
获取价格 |
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A | |
2N257B | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 3A I(C) | TO-3 | |
2N2580 | APITECH |
获取价格 |
Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, | |
2N2582 | APITECH |
获取价格 |
Power Bipolar Transistor, 10A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, | |
2N2583 | APITECH |
获取价格 |
Power Bipolar Transistor, 10A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, | |
2N2585 | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | |
2N2586 | CENTRAL |
获取价格 |
Small Signal Transistors | |
2N2586LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | |
2N2590 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 50MA I(C) | TO-46 | |
2N2591 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 50MA I(C) | TO-46 |