Datasheet > 2N2484

2N2484

更新时间： 2024-02-28 20:54:08

品牌	Logo	应用领域
博卡 - BOCA		晶体晶体管放大器 PC 局域网
页数	文件大小	规格书
3页	56K
描述
NPN SILICON PLANAR TRANSISTOR

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技术参数
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2N2484 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2N2484 数据手册

NPN SILICON PLANAR TRANSISTOR

2N2484

TO-18

Boca Semiconductor Corp

BSC

This transistors is primarily intended for use in high performance, low level,

low noise amplifier applications

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Emitter Voltage

Collector -Base Voltage

Emitter -Base Voltage

Collector Current Continuous

Power Dissipation @Ta=25 degC

Derate Above 25 deg C

Power Dissipation @Tc=25 degC

Derate Above 25 deg C

Operating And Storage Junction

Temperature Range

VCEO

VCBO

VEBO

6.0

360

2.06

1.20

6.85

mw/deg C

deg C

Tj, Tstg

-65 to +200

THERMAL RESISTANCE

Junction to Case

Junction to Ambient in Free Air

Lead Temperature

Rth(j-c)

Rth(j-a) *

146

485

300

deg C/W

deg C

1/16" from Case for 10 Seconds

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

Min

6.0

MAX UNIT

Collector -Emitter Voltage

Collector -Base Voltage

Emitter -Base Voltage

Collector-Cut off Current

VCEO**

VCBO

VEBO

ICBO

IC=10mA,IB=0

IC=10uA.IE=0

IE=10uA, IC=-0

VCB=45V, IE=0

Ta=150 deg C

VCB=45V, IE=0

VEB=5V, IC=0

0.35

0.7

Emitter-Cut off Current

Collector Emitter Saturation Voltage

Base Emitter on Voltage

IEBO

VCE(Sat) IC=1mA,IB=0.1mA

VBE(on) IC=0.1mA, VCE=5V

0.5

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