2N2432A PDF预览

2N2432A

更新时间: 2025-07-18 18:25:19
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描述
Polarity : NPN; Type : Low Power; Power Dissipation : 300; Maximum Collector Current : 100; Maximu

2N2432A 数据手册

 浏览型号2N2432A的Datasheet PDF文件第2页 
2N2432(A)  
SILICON NPN LOW POWER TRANSISTORS  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS  
Ratings  
Symbol  
VCEO  
VCBO  
VECO  
IC  
2N2432  
30  
2N2432A  
Unit  
Vdc  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Collector Voltage  
Collector Current  
45  
45  
18  
30  
Vdc  
15  
Vdc  
100  
mAdc  
mW  
Total Power Dissipation  
@ TA = +25°C(1)  
@ TC = +25°C(2)  
300  
600  
PT  
Storage Junction Temperature Range  
Operating Junction Temperature Range  
THERMAL CHARACTERISTICS  
Tstg  
TJ  
-65 to +200  
-65 to +175  
°C  
°C  
Characteristics  
Symbol  
Max.  
Unit  
Thermal Resistance, Junction-to-Case  
RθJC  
0.25  
mW/°C  
Note 1: Derate linearly 2.0mW/°C above TA > 25°C.  
Note 2: Derate linearly 4.0mW/°C above TC > 25°C.  
ELECTRICAL CHARACTERSITICS (TA = 25°C unless otherwise specified)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Emitter-Collector Breakdown Voltage  
IE = 100 μAdc, IB = 0  
2N2432  
2N2432A  
Both  
15  
18  
10  
-
-
-
V(BR)ECO  
Vdc  
IE = 10 mAdc, IB = 0  
Collector-Emitter Breakdown Voltage  
IC = 10 mAdc  
2N2432  
2N2432A  
30  
45  
-
-
V(BR)CEO  
Vdc  
Collector-Emitter Cutoff Current  
VCE = 25 Vdc  
VCE = 40 Vdc  
2N2432  
2N2432A  
ICES  
-
-
10  
10  
nAdc  
Collector-Base Cutoff Current  
VCB = 30 Vdc  
VCB = 25 Vdc  
VCB = 45 Vdc  
VCB = 40 Vdc  
2N2432  
2N2432  
2N2432A  
2N2432A  
-
-
-
-
100  
10  
100  
10  
μAdc  
nAdc  
μAdc  
nAdc  
ICBO  
Emitter-Collector Cutoff Current  
VEC = 15 Vdc, VBC = 0 Vdc  
IECS  
-
-
2.0  
2.0  
nAdc  
nAdc  
Emitter-Base Cutoff Current  
VEB = 15 Vdc  
IEBO  
ON-CHARACTERISTICS(3)  
Forward-Current Transfer Ratio  
IC = 10 μAdc, VCE = 5.0 Vdc  
IC = 1.0 mAdc, VCE = 5.0 Vdc  
hFE  
30  
80  
-
-
-
400  
Forward-Current Transfer Ratio (Inverted  
Connection)  
IC = 0.2 mAdc, VCE = 5.0 Vdc  
2N2432  
2N2432A  
hFE(inv)  
2.0  
3.0  
-
-
Rev. 20230510  

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