Datasheet > 2N2369

2N2369

更新时间： 2024-11-26 22:35:51

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页数	文件大小	规格书
2页	48K
描述
NPN SILICON PLANAR EPITAXIAL TRANSISTORS

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2N2369 数据手册

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

2N2369

2N2369A

TO-18

Boca Semiconductor Corp.

BSC

APPLICATIONS

2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With

Low Power & High Speed Switching Applications.

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VCEO

VCES

VCBO

VEBO

VALUE

4.5

200

UNIT

Collector -Emitter Voltage

Collector -Base Voltage

Emitter -Base Voltage

Collector Current Continuous

Collector Current Peak(10us pulse) IC(peak)

500

Power Dissipation@ Ta=25 degC

Derate Above 25 deg C

@Tc=25 deg C

360

2.06

1.2

mW/deg C

@Tc=100 deg C

0.68

6.85

-65 to +200

Derate Above100 deg C

Operating And Storage Junction

Temperature Range

mW/deg C

deg C

Tj, Tstg

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

2N2369

2N2369A UNIT

Collector -Emitter Voltage

Collector -Base Voltage

Emitter -Base Voltage

Collector-Cut off Current

VCEO*(sus)IC=10mA, IB=0

>15

>40

>4.5

<400

<30

>15

>40

>4.5

VCES

VCBO

VEBO

ICBO

IC=10uA, VBE=0

IC=10uA, IE=0

IE=10uA, IC=0

VCB=20V, IE=0

VCB=20V, IE=0, Ta=150 deg C

VCE=20V, VBE=0

ICES

<400

<0.20

<0.25

<0.50

<0.30

0.7-0.85

<1.15

<1.60

>0.59

<1.02

40-120

Base Current

Collector Emitter Saturation Voltage VCE(Sat)* IC=10mA,IB=1mA

<0.25

IC=30mA,IB=3mA

IC=100mA,IB=10mA

IC=10mA,IB=1mA,Ta= +125 deg C

VBE(Sat) * IC=10mA,IB=1mA

Base Emitter Saturation Voltage

0.7-0.85

IC=30mA,IB=3mA

IC=100mA,IB=10mA

IC=10mA,IB=1mA,Ta= +125 deg C

IC=10mA,IB=1mA, Ta= -55 deg C

IC=10mA, VCE=1V

DC Current

hFE*

40-120

>20

IC=10mA,VCE=1V, Ta= -55 deg C

IC=10mA,VCE=0.35V, Ta= -55 deg C

>20

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