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2N2329 PDF预览

2N2329

更新时间： 2024-09-24 20:24:43
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描述
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 400; Max TMS Bridge Input Voltage: 1; Max DC Reverse Voltage: 0.1; Capacitance: 0.15; Package: TO-39

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2N2329 技术参数

生命周期：ActiveReach Compliance Code：unknown
风险等级：5.62Is Samacsys：N
Base Number Matches：1

2N2329 数据手册

 浏览型号2N2329的Datasheet PDF文件第2页浏览型号2N2329的Datasheet PDF文件第3页 
2N2322(A)-2N2329(A)  
SILICON CONTROLLED RECTFIERS  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS  
2N2322  
2N2323  
2N2324  
2N2325  
2N2326  
2N2327  
2N2328  
Ratings  
Symbol  
Units  
2N2322A  
2N2323A  
2N2324A  
2N2325A  
2N2326A  
2N2327A  
2N2328A  
2N2329  
400  
Peak repetitive forward voltage  
Peak repetitive reverse voltage  
Non-repetitive peak reverse voltage  
VDRM  
VRRM  
VRSM  
25  
25  
40  
50  
50  
75  
100  
100  
150  
150  
150  
225  
200  
200  
300  
250  
250  
350  
300  
300  
400  
V
V
V
400  
500  
DC on-state current  
80°C ambient  
85°C case  
IT(AV)  
300  
1.6  
mA  
A
One cycle surge on-state current  
Repetitive peak on-state current  
Gate power dissipation  
Gate power dissipation  
Peak gate current  
ITSM  
ITM  
15  
30  
A
A
PGM  
PGM(AV)  
IGM  
0.1  
0.01  
100  
6
W
W
mA  
V
Reverse gate voltage  
VGR  
Reverse gate current  
IGR  
3
mA  
°C  
°C  
Operating temperature  
Storage junction temperature  
Top  
-65 to +125  
-65 to +150  
Tstg  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Characteristics  
Off-state current  
Symbol  
IDRM  
Min  
Typ  
0.1  
0.1  
Max  
10  
Unit  
Test Condition  
-
-
µA  
µA  
VDRM = rating, RGK = 1K (2K for “A” types)  
VRRM = rating, RGK = 1K (2K for “A” types)  
Reverse current  
IRRM  
10  
Gate trigger current  
“A” types  
Ω
VD = 6V, RL = 100  
IGT  
-
-
2
20  
µA  
V
Non “A” types  
50  
200  
Gate trigger voltage  
“A” types  
Ω
VD = 6V, RGK = 2K, RL = 100  
VGT  
0.35  
0.35  
0.52  
0.55  
0.60  
0.80  
Non “A” types  
VD = 6V, RGK = 1K, RL = 100Ω  
ITM = 4A (pulse test)  
On-state voltage  
Holding current  
VTM  
IH  
-
-
-
-
-
-
2.0  
0.3  
1
2.2  
2.0  
200  
-
V
mA  
µA  
µs  
VD = 6V, RGK = 1K (2K for “A” types)  
VGR = 6V  
Reverse gate current  
Delay time  
IGR  
td  
0.6  
0.4  
20  
IG = 10mA, IT = 1A, VD = 30V  
IG = 10mA, IT = 1A, VD = 30V  
IT = 1A, IR = 1A, RGK = 1K  
Rise time  
tr  
-
µs  
Circuit commutated turn off time  
tq  
-
µs  
ELECTRICAL CHARACTERISTICS @ 125°C  
Characteristics Symbol  
Off-state current  
Min  
Typ  
Max  
Unit  
µA  
µA  
V
Test Condition  
IDRM  
IRRM  
VGT  
-
-
1
1
100  
100  
-
VDRM = rating, RGK = 1K (2K for “A” types)  
VRRM = rating, RGK = 1K (2K for “A” types)  
VD = rated VD, RGK = 1K (2K for “A” types)  
Reverse current  
Gate trigger voltage  
0.1  
0.3  
Holding current  
“A” types  
IH  
0.1  
-
-
-
-
mA  
VD = 6V, RGK = 2K  
VD = 6V, RGK = 1K  
Non “A” types  
0.15  
Off-state voltage – critical rate of rise  
“A” types  
dv/dt  
0.7  
1.8  
-
-
-
-
V/µs  
VDRM = rating, RGK = 2K  
VDRM = rating, RGK = 1K  
Non “A” types  
Rev. 20130116  
123

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