Datasheet > 2N2326

2N2326

更新时间： 2024-01-31 05:43:14

品牌	Logo	应用领域
COMSET		栅极
页数	文件大小	规格书
3页	80K
描述
SILICON THYRISTORS

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中文翻译

获取价格

技术参数
数据手册

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2N2326 技术参数

生命周期：	Transferred	Reach Compliance Code：	compliant
风险等级：	5.61	Is Samacsys：	N
触发设备类型：	SCR	Base Number Matches：	1

2N2326 数据手册

2n2322 to 2n2326

SILICON THYRISTORS

All-diffused PNPN thyristors designed for grating operation in mA/µA signal

or detection circuits

Compliance to RoHS.

MAXIMUM RATINGS (*)

T_J=125°C unless otherwise noted, R_GK=1000Ω

2N2322 2N2323 2N2324 2N2325 2N2326 Unit

Symbol

V_RRM(REP)

Ratings

Peak reverse blocking voltage

(*)

100

150

1.6

150

225

200

300

V_RSM(NON-Non-repetitive peak blocking

REP)

reverse voltage (t<5.0 ms)

Forward Current RMS (all

conduction angles)

I_T(RMS)

Peak Surge Current

(One-Half Cycle, 60Hz)

No Repetition Until Thermal

I_TSM

Equilibrium is Restored.

P_GM

Peak Gate Power – Forward

0.1

Average Gate Power -

Forward

P_G(AV)

0.01

I_GM

Peak Gate Current – Forward

Peak Gate Voltage - Forward

Peak Gate Voltage - Reverse

0.1

6.0

V_GFM

V_GRM

Operating Junction

Temperature Range

T_J

-65 to +125

-65 to +150

°C

T_STG

Storage Temperature Range

12/11/2012

COMSET SEMICONDUCTORS

1 | 3

12 3

中文翻译

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与2N2326相关器件

型号	品牌	获取价格	描述	数据表
2N2326A	MICROSEMI	获取价格	SILICON CONTROLLED RECTIFIER
2N2326A	NJSEMI	获取价格	Thyristor SCR 200V 15A 3-Pin TO-5
2N2326A	CENTRAL	获取价格	1.6A,200V Through-Hole SCR
2N2326AS	MICROSEMI	获取价格	SILICON CONTROLLED RECTIFIER
2N2326ASE3	MICROSEMI	获取价格	Silicon Controlled Rectifier, 0.3454A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-5,
2N2326S	MICROSEMI	获取价格	SILICON CONTROLLED RECTIFIER
2N2326SE3	MICROSEMI	获取价格	Silicon Controlled Rectifier, 0.3454A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-5,
2N2327	DIGITRON	获取价格	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 250; Max TMS Bridge Inp
2N2327	NJSEMI	获取价格	Thyristor SCR 250V 15A 3-Pin TO-39
2N2327	MICROSEMI	获取价格	SCRs 1.6 Amp, Planear