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2N2326 PDF预览

2N2326

更新时间: 2024-01-31 10:52:57
品牌 Logo 应用领域
CENTRAL 栅极触发装置可控硅整流器
页数 文件大小 规格书
2页 131K
描述
SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS

2N2326 技术参数

生命周期:TransferredReach Compliance Code:compliant
风险等级:5.61Is Samacsys:N
触发设备类型:SCRBase Number Matches:1

2N2326 数据手册

 浏览型号2N2326的Datasheet PDF文件第2页 
TM  
2N2322 2N2326  
2N2323 2N2327  
2N2324 2N2328  
2N2325 2N2329  
Central  
Semiconductor Corp.  
SILICON CONTROLLED RECTIFIER  
1.6 AMPS, 25 THRU 400 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N2322  
Series types are hermetically sealed Silicon  
Controlled Rectifiers designed for sensing  
circuit applications and control systems.  
MARKING: FULL PART NUMBER  
2N23__  
TO-39 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL 22  
23  
24  
25  
26  
27  
28  
29 UNITS  
Peak Repetitive Forward Voltage  
Peak Repetitive Reverse Voltage  
Non-Repetitive Peak Reverse Voltage  
RMS On-State Current  
V
V
V
25  
25  
40  
50 100 150 200 250 300 400  
V
DRM  
RRM  
RSM  
50 100 150 200 250 300 400  
V
75 150 225 300 350 400 500  
V
I
1.6  
1.0  
A
T(RMS)  
Average On-State Current (T =85°C)  
C
I
A
T(AV)  
Peak One Cycle Surge (t=8.3ms)  
I
15  
A
TSM  
Peak Gate Power  
P
0.10  
W
W
A
GM  
Average Gate Power  
Peak Gate Current  
P
0.01  
G(AV)  
I
0.10  
GM  
Peak Gate Voltage  
V
6.0  
V
GM  
Junction Temperature  
Storage Temperature  
T
-65 to +125  
-65 to +150  
°C  
°C  
J
T
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
Rated V , V  
MIN  
MAX  
5.0  
UNITS  
μA  
I
I
I
, I  
, R =1.0kΩ  
DRM RRM  
DRM RRM GK  
V =6.0V, R =100Ω  
200  
2.0  
0.8  
1.5  
μA  
mA  
V
GT  
H
D
L
V =6.0V, R =1.0kΩ  
GK  
D
V
V =6.0V, R =100Ω  
GT  
TM  
D
L
V
I
=1.0A, tp=380μs  
V
TM  
R0 (11-December 2008)  

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