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2N2322 PDF预览

2N2322

更新时间: 2024-11-20 07:28:19
品牌 Logo 应用领域
CENTRAL 栅极可控硅
页数 文件大小 规格书
2页 131K
描述
SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS

2N2322 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-39
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.11
配置:SINGLE最大直流栅极触发电流:0.2 mA
最大直流栅极触发电压:0.8 V最大维持电流:2 mA
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
JESD-609代码:e0最大漏电流:0.1 mA
通态非重复峰值电流:15 A元件数量:1
端子数量:3最大通态电流:1600 A
最高工作温度:125 °C最低工作温度:-65 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:1.6 A
断态重复峰值电压:25 V重复峰值反向电压:25 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

2N2322 数据手册

 浏览型号2N2322的Datasheet PDF文件第2页 
TM  
2N2322 2N2326  
2N2323 2N2327  
2N2324 2N2328  
2N2325 2N2329  
Central  
Semiconductor Corp.  
SILICON CONTROLLED RECTIFIER  
1.6 AMPS, 25 THRU 400 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N2322  
Series types are hermetically sealed Silicon  
Controlled Rectifiers designed for sensing  
circuit applications and control systems.  
MARKING: FULL PART NUMBER  
2N23__  
TO-39 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL 22  
23  
24  
25  
26  
27  
28  
29 UNITS  
Peak Repetitive Forward Voltage  
Peak Repetitive Reverse Voltage  
Non-Repetitive Peak Reverse Voltage  
RMS On-State Current  
V
V
V
25  
25  
40  
50 100 150 200 250 300 400  
V
DRM  
RRM  
RSM  
50 100 150 200 250 300 400  
V
75 150 225 300 350 400 500  
V
I
1.6  
1.0  
A
T(RMS)  
Average On-State Current (T =85°C)  
C
I
A
T(AV)  
Peak One Cycle Surge (t=8.3ms)  
I
15  
A
TSM  
Peak Gate Power  
P
0.10  
W
W
A
GM  
Average Gate Power  
Peak Gate Current  
P
0.01  
G(AV)  
I
0.10  
GM  
Peak Gate Voltage  
V
6.0  
V
GM  
Junction Temperature  
Storage Temperature  
T
-65 to +125  
-65 to +150  
°C  
°C  
J
T
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
Rated V , V  
MIN  
MAX  
5.0  
UNITS  
μA  
I
I
I
, I  
, R =1.0kΩ  
DRM RRM  
DRM RRM GK  
V =6.0V, R =100Ω  
200  
2.0  
0.8  
1.5  
μA  
mA  
V
GT  
H
D
L
V =6.0V, R =1.0kΩ  
GK  
D
V
V =6.0V, R =100Ω  
GT  
TM  
D
L
V
I
=1.0A, tp=380μs  
V
TM  
R0 (11-December 2008)  

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