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2N1800 PDF预览

2N1800

更新时间: 2024-10-29 07:20:27
品牌 Logo 应用领域
NJSEMI 栅极触发装置可控硅整流器
页数 文件大小 规格书
1页 129K
描述
T7A/T7B

2N1800 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.64Is Samacsys:N
Base Number Matches:1

2N1800 数据手册

  

与2N1800相关器件

型号 品牌 获取价格 描述 数据表
2N1800E3 MICROSEMI

获取价格

Silicon Controlled Rectifier, 110A I(T)RMS, 720V V(DRM), 720V V(RRM), 1 Element, TO-208AD,
2N1800F MICROSEMI

获取价格

Silicon Controlled Rectifiers (fase)
2N1800FE3 MICROSEMI

获取价格

Silicon Controlled Rectifier, 110A I(T)RMS, 1 Element, TO-208AD, TO-83, 2 PIN
2N1800M INFINEON

获取价格

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 600V V(DRM), 600V V(RRM), 1 Elem
2N1800MPBF INFINEON

获取价格

Silicon Controlled Rectifier, 110A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-208AD
2N1801 MICROSEMI

获取价格

Silicon Controlled Rectifier
2N1801 NJSEMI

获取价格

T7A/T7B
2N1801E3 MICROSEMI

获取价格

Silicon Controlled Rectifier, 110A I(T)RMS, 720V V(DRM), 720V V(RRM), 1 Element, TO-208AD,
2N1801M INFINEON

获取价格

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 700V V(DRM), 700V V(RRM), 1 Elem
2N1801MPBF INFINEON

获取价格

Silicon Controlled Rectifier, 110A I(T)RMS, 700V V(DRM), 700V V(RRM), 1 Element, TO-208AD