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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| 2N1651 | NJSEMI |
获取价格 |
DAP transistors are de-signed for efficient high current switching at high frequencies |
|
| 2N1652 | NJSEMI |
获取价格 |
DAP transistors are de-signed for efficient high current switching at high frequencies |
|
| 2N1653 | NJSEMI |
获取价格 |
DAP transistors are de-signed for efficient high current switching at high frequencies |
|
| 2N1654 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 50MA I(C) | TO-5 |
|
| 2N1655 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 50MA I(C) | TO-5 |
|
| 2N1656 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 50MA I(C) | TO-5 |
|
| 2N166 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 20MA I(C) | CAN |
|
| 2N167 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 75MA I(C) | TO-22VAR |
|
| 2N1671 | ASI |
获取价格 |
UNIJUNCTION TRANSISTOR |
|
| 2N1671 | NJSEMI |
获取价格 |
intended for general purpose industrial applications where circuit economy is of primary i |
|
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