生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 8.37 | 最大直流栅极触发电流: | 10 mA |
最大直流栅极触发电压: | 3 V | 最大维持电流: | 25 mA |
最大漏电流: | 1 mA | 通态非重复峰值电流: | 25 A |
最大通态电流: | 3000 A | 最高工作温度: | 125 °C |
最低工作温度: | -60 °C | 断态重复峰值电压: | 200 V |
子类别: | Silicon Controlled Rectifiers | 表面贴装: | NO |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N1602A | POWEREX |
获取价格 |
Silicon Controlled Rectifier, 4500mA I(T), 200V V(DRM), | |
2N1603 | TI |
获取价格 |
2N1603 | |
2N1603A | POWEREX |
获取价格 |
Silicon Controlled Rectifier, 4500mA I(T), 300V V(DRM), | |
2N1604 | NJSEMI |
获取价格 |
SCR, V (DRM) = 400 V TO 499.9 V | |
2N1604 | TI |
获取价格 |
2N1604 | |
2N1604A | POWEREX |
获取价格 |
Silicon Controlled Rectifier, 4500mA I(T), 400V V(DRM) | |
2N1605 | ETC |
获取价格 |
alloy-junction germanium transistors | |
2N1605A | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 24V V(BR)CEO | 100MA I(C) | TO-5 | |
2N1606 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-5 | |
2N1607 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-5 |